| 摘要 |
PURPOSE:To obtain the current limiting resistance of a bipolar IC without lowering the density of integration by a mechanism wherein insulating films are formed on a semiconductor substrate from which transistors are to be made, a semiconductor layer is formed on the insulating films, and a resistance element is formed. CONSTITUTION:Wiring layers 11 are mounted on the surface of a semiconductor substrate 6 to which NPN transistors, etc. are built up through insulating films 12, a semiconductor layer 9 such as poly Si is formed on the layers 11 through an insulating layer 14, and a resistance element is constituted by the semiconductor layer 9. Thereby, a degree of integration is improved because excessive area for necessary resistance is not needed, and operation at high speed is enabled because capacity parasitic to the resistance element is not generated. |
