发明名称 MOS TYPE MEMORY INTEGRATED CIRCUIT
摘要 PURPOSE:To prevent unstable operation of memory, by grounding the memory input terminal, when the power supply of memory drive gate IC is off. CONSTITUTION:When the power supply for an MOS type memory IC drive gate IC4 is off, a junction type FET5 is on, the input terminal 1 of the memory IC is grounded, an input stage MOS type transistor 3 is off. Further, if the power supply of the gate IC4 is on, an FET5 is off for normal operation.
申请公布号 JPS5666933(A) 申请公布日期 1981.06.05
申请号 JP19790142512 申请日期 1979.11.02
申请人 NIPPON ELECTRIC CO 发明人 NAKAMURA TOMOHARU;UEKI ISAO
分类号 G11C11/417;G11C5/14;H03K17/08;H03K19/0175 主分类号 G11C11/417
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