| 摘要 |
PURPOSE:To decrease processes, diminish errors and obtain large difference in stages by a method wherein an element pattern as well as an automatic positioning pattern are made up on an insulating film on a substrate, and the substrate is etched. CONSTITUTION:An SiO2 film 2 is made up on an Si substrate 3, and resist-masks 1 for forming an automatic positioning pattern and an element pattern are each built up to regions I, II. The film 2 is etched, the masks 1 are removed and B is introduced to the Si substrate by BBr3 in a nonoxidizable atmosphere. At the same time, Si is etched by Br, and difference in stages (a) is made up. When thermally treating the substrate, an impurity layer is expanded while Si is also oxidized to form SiO2, and the difference in stages of Si for positioning further expands to (b). According to this constitution, positioning accuracy is little because the number of man- hour of positioning is few, and large difference in stages is obtained. |
