| 摘要 |
PURPOSE:To improve photoelectric transducing efficiency by providing a number of V-type structures on the front and back surfaces of a semiconductor and by forming an MIS structure on these V-type front and back surfaces. CONSTITUTION:V-type grooves 8 and 9 are formed on both surfaces of the semiconductor 1. On the surfaces of these grooves 8 and 9 are formed insulation or half- insulation films 6 and 12 having the thickness which can allow tunnel current to flow. Next, a film of metal having a small work function, such as, for instance, Al or Mg, is formed on the back surface, thereon an Alfilm is formed and thus an electrode 4 of multilayer structure is formed, while an electrode of a Pt film 2 is formed on the front surface. By such a constitution, the efficiency of transmission of light is improved when the light 5 transmits the semiconductor 1 from the outside air, while the V-type grooves reflect the light in the semiconductor efficiently to each other. Moreover, since the difference in the work function between Pt and Mg is large, the photoelectric transducing efficiency can further be improved. |
