| 摘要 |
<p>PURPOSE:To enable to control the pre-tilt angle of the initial orientation of liquid crystals by forming an orientation treatment layer of superior heat resistance by a specific diagonal vapor deposition method. CONSTITUTION:In making diagonal vapor deposition of inorg. substance such as SiO on at least one substrate 1 constituting the cell, in a range from 60 deg. to 85 deg. of a main vapor deposition angle, it is carried out at the bearing angle of a vapor deposition beam 5 with respect to the substrate 1 from at least 6 bearing within the range from 0 deg. to 360 deg.. If the substance is vapor-deposited from continuous all bearings by making the angle and rate of vapor deposition constant, the columnar structure which is upright to the substrate 1 is formed and this results in homeotropic orientation. When the vapor deposition conditions are not equal to each bearing, the structure slightly inclined from the substrate normal is formed and this results in the tilt orientation having a large pre-tilt angle.</p> |
