发明名称 Semiconductor device
摘要 <p>A semiconductor device comprises a semiconductor component (1) having a pair of principal faces and at least one PN junction between them, a pair of electrodes (4, 5), each of which is in contact with one of the pair of principal faces, and synthetic resin material (7). The synthetic resin material (7) is applied to a lateral circumferential face of the semiconductor component (1) and extends from one of the pair of electrodes (4, 5) to the other. A circumferential edge of each of the electrodes (4, 5) extends further in the direction parallel to the principal faces of the semiconductor component (1) than a circumferential edge of the semiconductor component (1) extends in the same direction. Artificial coating resin (7) is provided between the opposite projecting faces (4c, 5c) of the pair of electrodes (4, 5). <IMAGE></p>
申请公布号 DE3113850(A1) 申请公布日期 1982.01.14
申请号 DE19813113850 申请日期 1981.04.06
申请人 HITACHI,LTD. 发明人 ARAKAWA,HIDEO;KUNIYA,KEIICHI;NAMEKAWA,TAKASHI;OHASHI,MASAFUMI;GODA,MASAHIRO;SUZUKI,HIROSHI
分类号 H01L21/52;H01L21/58;H01L23/04;H01L23/051;H01L23/31;H01L23/492;(IPC1-7):01L23/48;01L29/91;01L29/70;01L23/30 主分类号 H01L21/52
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