发明名称 INSPECTING METHOD FOR WAFER SRRFACE DEFECT
摘要 PURPOSE:To automtically inspect the propriety of resolution by forming blank and residual patterns of the same size on a mask, taking the formed resist image, treating a single and evaluating the pattern size ratio and its stability. CONSTITUTION:Blank pattern 19 of microminiature sizes e, f, where a negative resist is used, and a residual pattern 15 are formed as an inspection at one or plural positions on a mask, and the resist layer on the wafer 24 is exposed and developed. The bright field image of this resist pattern is taken by a TV camera 23, and a signal is processed to express the reflection light signal produced from the step of the pattern edge to be expressed, for example, by time intervals k, i for the sizes of the respective patterns. When the resist pattern is suitably processed, the ratio of k or i becomes approximately 1, bur when the pattern is improper, the difference of the k and i becomes large and unstable, thereby automatically inspecting the propriety of the resolution.
申请公布号 JPS5720435(A) 申请公布日期 1982.02.02
申请号 JP19800095333 申请日期 1980.07.10
申请人 MITSUBISHI ELECTRIC CORP 发明人 HIRATA YOUJI
分类号 H01L21/66;H01L21/027;H01L21/30 主分类号 H01L21/66
代理机构 代理人
主权项
地址