发明名称 |
High voltage detection circuit |
摘要 |
An N-channel MOS high voltage detection circuit generates an output when an input voltage (Vin) exceeds a supply voltage (VDD) by a desired offset voltage. The crossover detection is delayed by pumping more current into an output producing node via a lower resistance field effect transistor having a gate coupled to the input voltage. The output is finally produced when the effect of this transistor is overcome by a second field effect transistor. Switching characteristics may be sharpened by placing a voltage limiting field effect transistor between Vin and the gate of the low resistance field effect transistor.
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申请公布号 |
US4318013(A) |
申请公布日期 |
1982.03.02 |
申请号 |
US19790035042 |
申请日期 |
1979.05.01 |
申请人 |
MOTOROLA, INC. |
发明人 |
THOMAS, JAMES S.;ECKERT, KIM |
分类号 |
H03K5/24;(IPC1-7):H03K5/24;H03K17/30;H03K17/68 |
主分类号 |
H03K5/24 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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