| 摘要 |
PURPOSE:To work the pattern minutely without regard to the quality of material and the unevenness of the surface of a specimen to be worked, and to improve the accuracy of the dimensions of the pattern by using a material for smoothing the surface. CONSTITUTION:A field oxide film 2 and a gate oxide film 3 are formed on an upper surface of a Si substrate 1, and the surface is coated with a polysilicon film 4 constituting a gate electrode. A PSG film 5 through a CVD method is deposited on these upper surfaces, and annealed by lasers and the surface is smoothed. A polysilicon film 6 (a member for smoothing) is deposited, and annealed by lasers, and the polysilicon film 6 is changed into a single crystal while the surface is smoothed. The upper surface is coated with a resist 7, and the desired pattern is drawn. The polysilicon film 6, the PSG film 5 and the gate oxide film 3 are etched successively using the resist 7 as a mask, and the minute pattern is formed. |
