| 摘要 |
An oxide coating containing doping material is produced on a body of semi-conductor material, such as silicon, by subjecting it to a temperature between 250 DEG C. and 370 DEG C. while exposed to the action of water vapour mixed with a substance which ionizes at that temperature to produce hydrogen and/or alkali ions and also comprises a doping material. After the production of the oxide coating the body is heated to above 1000 DEG C. to cause the doping material to diffuse from the coating into the semi-conductor material. In one example semi-conductor wafers, mounted in a glass rack, are sealed in a glass ampoule with a quantity of boric acid and water and heated at 300 DEG C. for 16 hours. This results in a boron doped oxide coating and subsequent heat treatment at 1280 DEG C. for 16 hours in a current of nitrogen causes the boron to diffuse into the semiconductor material. An aqueous solution of hydrogen peroxide may be used instead of water. |
