发明名称 ELECTRODE FORMING METHOD
摘要 PURPOSE:To form extremely small electrodes on an insulator substrate by providing a conductive film previously under resist films to be lifted off by applying a lift- off method. CONSTITUTION:A conductive film 20 is adhered onto an insulator substrate 10, on which electronic resist films are provided. Then, the resist films 30 are irradiated selectively with electron beams and dipped in a developing solution to be worked in a prescribed pattern. A metallic film 40 is then adhered onto the entire surface. Simultaneously with the removal of the resist 30, the metallic films 40 adhered onto the resist 30 are also removed. The metallic films 40 left on the substrate 10 surface are used as a mask to remove the conductive film 20 selectively, thus forming electrodes. Consequently, the work of the extremely small electrodes is realized.
申请公布号 JPS5763912(A) 申请公布日期 1982.04.17
申请号 JP19800139382 申请日期 1980.10.07
申请人 TOKYO SHIBAURA DENKI KK 发明人 KANAZAWA MAMORU
分类号 H03H3/08;(IPC1-7):03H3/08 主分类号 H03H3/08
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