| 摘要 |
PURPOSE:To form a minute wiring pattern by applying laser beams on insulating films so as to eliminate a groove formed between insulating films which are adjacent to a metal wiring. CONSTITUTION:The insulating film 12 is formed on a silicon substrate 11 and an aluminum alloy 13 is connected to the whole surface of the film. Then, a resist pattern is formed and the aluminum alloy is etched. Thereafter, a PSG oxide film is connected, in the same thickness with that of the aluminum alloy, to the whole surface and the part of the PSG oxide film on the side surface of the resist pattern is removed by etching, and the unnecessary PSG oxide film is lifted off together with the resist pattern. Next, by applying laser beams 16 on the whole surface, the melting of the PSG oxide film 14 takes place since the reflection factor is different between the aluminum alloy 13 and the PSG oxide film 14, the groove 15 is thereby eliminated and a flat surface is obtained. Then, an aluminum alloy 17 to form the second layer is connected to the surface thus obtained. In this way, fine processing is enabled without occurrence of disconnection of the wiring. |
