| 摘要 |
PURPOSE:To enhance the reliability of a surface wave exciting electrode (Al electrode) by placing a glass film (silicon nitride film) under the electrode so as to prevent the reaction of a component in an optical waveguide with the electrode. CONSTITUTION:SiO2 contg. GEO3, P2O5, B2O3 or the like is deposited on a quartz substrate 1 by a chemical vapor phase growing method and melted by heating at about 1,200-1,500 deg.C to form a glass film 2 for an optical waveguide. On the film 2 the 2nd glass film 3 made of silicon nitride and an Al layer 4 are laminated. The Al layer 4 is worked into a prescribed pattern by a photoetching method, and the 2nd glass film 3 is ion-etched by using the layer 4 as a masking film . A ZnO film 5 as a surface wave exciting material is then formed on the whole surface and worked into a prescribed pattern by a photoetching method to manufacture an integrated optical circuit. An aluminum oxide film may be used as the 2nd glass film 3. |
