SEMICONDUCTOR LASER

摘要

PURPOSE:To obtain a laser luminous flux having excellent parallelism and small beam diverging angle by interposing an extremely thin active layer with semiconductor layers having refractive index smaller than that of the active layer and burying them in a semiconductor having larger forbidden band width then the active layer and larger refractive index than the semiconductors disposed at both sides of the active layer. CONSTITUTION:An N type AlyGa1-yAs layer 2', an undoped AlxGa1-xAs acitve layer 1 and a P type AlyGa1-yAs layer 2 are sequentially laminated on an N type GaAs substrate 4, are epitaxially grown in liquid phase, and with an SiO film as a mask they are selectively etched to form the layer 1 interposed between the layers 2 and 2' in a stripe shape. Then, the stripe region is surrounded by Al2Ga1-zAs layer 3, the entire region is covered with Al2O3 film 5 and phosphorus silicate glass film 6, a hole is formed on the striped region, an ohmic electrode 8 extending on the film 6 is covered in contact with the layer 2, and an electrode 7 is mounted on the back surface of the substrate 4. In the structure the refractive indexes of the layers 1,2 and 2',3 are n2, n2'