| 摘要 |
PURPOSE:To improve the manufacturing yield rate and reliability in the exposing process of desired area, by applying the exposing process on the desired region with such an exposing size that a part of the desired area is overlapped with a part of the adiacent area to be exposed. CONSTITUTION:The electron beam 2 which is irradiated from an electron gun 1 comprising a cathode, a grid, and an anode is shaped into a square cross section by a stop 3, passes through a condenser lens 4, and is deflected by deflecting plate 5X and 5Y. The square beam goes through an L shaped stopping plate 6, deflecting plate 7X and 7Y, and a condenser lens 8, and an intended position on semiconductor substrate 9 is exposed. In this case, the exposing size is such that a part of the exposing area, which is adjacent to the desired area, is overlapped with the desired area. In this way the exposing process is performed on the desired exposing area. |
