| 摘要 |
PURPOSE:To equalize the degree of out of focus of each divided pattern as well as to perform the highly precise exposure of an electron beam by a method wherein, when a variable rectangular beam is exposed, a pattern is devided into a plurality of rectangular parts having equal longitudinal and lateral dimensions, and a rectangular beam corresponding to the rectangular shape is used. CONSTITUTION:The electron beam which was emitted from an electron beam emitter 11 is passed through the first slit 13 through the intermediary of a capacitor lens 12, and image formed on the second slit 15 through the intermediary of a lens 14. At this time, the beam is deflected by the slit deflector 16 proveded at a point close to the lens 14, and when the beam has passed through the slit 15, the rectangular beam of the desired size is obtained, and an exposure is performed on the sample surface 20 while the positon of exposure is controlled by a main deflector 19 through the intermediary of a reducing lens 17 and a projection lens 18. According to this constitution, as a rectangular data pattern is divided into a plurality of patterns having the equal longitudinal and lateral measurements, the beam size corresponding to the divided patterns is formed using the slits 13 and 15, and the desired pattern is formed with the number of exposure corresponding to the above measurements. |
