| 摘要 |
PURPOSE:To prevent the generation of a false signal without lowering a saturating signal current by a method wherein the source region impurity density of the MOSFET, which constitutes a picture element at the section liable to generate a capacity coupling with a vertical signal line, is reduced as compared with the other section. CONSTITUTION:In the region isolated by an oxide film 8 on a P type Si substrate 1, for example, the MOSFET6 is formed, the vertical signal line 9 is provided on a gate region through an interlayer film 4, and the picture element, having a source junction region as a photoelectric converting section 7, is constituted. On source and drain regions 2 and 3, and N<+> layer is formed by diffusion, but in this case, the impurity density of the section 2b, which is overlapped with the signal line 9 of the source N<+> layer, is to be formed lower than that of the non-overlapped section 2a. Through these procedures, the potential drop at the time of light irradiation on the region 2b, which is susceptible to generate a capacity coupling, can be reduced and the potential drop of the signal line 9, which will cause a false signal, can also be reduced. Also, as both of regions 2a and 2b contribute to the accumulation of charge by a photo signal, the reduction in dynamic range can be prevented, thereby enabling to obtain a highly efficient and reliable element. |
