| 摘要 |
PURPOSE:To increase the tight-adhesive strength, to prevent the short-circuit and to increase the yielding rate for the subject diode by a method wherein, in the process of diode formation where Ni, Se and Cd are successively laminated and a heat-treatment is performed, a thin Mn film is interposed on the substrate providing an Ni lower electrode. CONSTITUTION:After the Ni lower electrode 11' has been provided on an alumina or glass substrate 10, an Mn film 12 of 50A or thereabouts is mask-evaporated. Then, after an SeTe film 13 and an SeI film 14, as Se film, and a CdSn film 15, as Cd film, have been successively mask-evaporated, a heat-treatment is performed at 200-350 deg.C, and an N type CdSe diffusion film is formed by performing a mutual diffusion of a film 14 and a film 15. Subsequently, an NiCr- Au film 16 is formed on the whole surface, the upper electrode 17 and the lower electrode 18 are formed by performing a pattering. The tight-adhesiveness of the Ni film and the substrate can be improved, since the Mn film 12 and the Se are liable to make ohmic contacted with each other. Also, as a uniformly crystallized Se is obtained with the Mn functioning as a nucleus, the short-circuit generating when the upper electrode is formed can be prevented and the yielding rate of the diode can also be improved. |
