| 摘要 |
PURPOSE:To manufacture the P-N junction of an N type CdSe diffusion film and an Se film as well as to increase the yielding rate for the thin film diode by a method wherein a Cd film, an Se film and an Ni film are successively laminated on the substrate consisting of alumina or glass, and then a heat-treatment is performed. CONSTITUTION:In the process of manufacture of a blocking diode with thermal head, a Cd film (1mum) is evaporated on a substrate 1 through the intermediary of an NiCr film of 500A or thereabouts, and the lower electrode 11' is formed by performing a patterning. Then, as Se film, an N type CdSe film 12 of 500A and an SeI film 13 of 1mum is mask-evaporated. Then, an Ni film 14 is evaporated on the whole surface, and after a heat-treatment has been performed at the temperature range of 200-350 deg.C, the upper electrode 15 is formed by patterning the Ni film 14, and a diode consisting of the N type CdSe and Se is formed. According to this constitution, the yielding rate of the diode can be improved, since the exfoliation of the film due to heat treatment can be prevented. |
