| 摘要 |
PURPOSE:To obtain the resistor having bulk characteristics by a method wherein conductor patterns, having the area larger than the average surface area of crystal grains, are scattered on the surface and the back side of a polycrystalline semicondutor thin film in such a manner that each conductor is overlapped on the plularity of conductors located on the opposite surface. CONSTITUTION:A Ti film is evaporated on a quartz substrate 1, and a back face conductor 2 is obtained by forming a number of condutor patterns in a straight-line form of 200mum in width and the distance between conductors of 20mum in thickness is evaporated, and a monogram layer 3, having an approximate crystal grain of 50mum, is formed by performing a heat-treatment at a high temperature in a hydrogen atmosphere. Then, an Au-Ti alloy is evaporated on the surface of the above monograin layer 3, and after a heat-treatment has been performed, a number of surface conductors 4 of 180mum in width and the distance between conductors of 40mum are rectilinearly formed in such a manner that the center of the conductor 4 coincides with the center of the gap section of the back conductor 2. Subsequently, the resistor is formed by providing gate lead-out electrodes at both end sections. A resistor having bulk characteristics is obtained by providing a current route using the monograin layer 3 through the intermediary of condutors 2 and 4. Through these procedures, the resistor suitable for various sensor elements can be formed easily. |
