| 摘要 |
PURPOSE:To enlarge controllable withstand current quantity of a semiconductor device by a method wherein an N type emitter is extended continuously up to the lower part of bonding pad part of a cathode electrode, and an insulator of silicon oxide film, etc., is interposed between the cathode electrode and the N type emitter. CONSTITUTION:A switching functional part 300A constitutes a P-N-P-N thyristor having structure in which a P type emitter 304 is short-circuited to an anode electrode 301. An N type emitter 307 is provided facing with the P type emitter 304 interposing an N type base 305 and a P type base 306 between them. The N type emitter 307 has structure extended up to a bonding pad part 300B. A gate electrode 303 is provided on the P type base 306 as to interposed the N type emitter 307 between them. At the bonding pad part 300B, a silicon oxide film 308 is interposed between a cathode electrode 302 and the N type emitter.
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