发明名称 |
METHOD OF PRODUCING AMORPHOUS SILICON SEMICONDUCTOR DEVICE |
摘要 |
A semicomductor device comprises a body of amorphous silicon fabricated by a glow discharge in silane, and a metallic region on a surface of said body providing a surface barrier junction at the interface of said metallic region and said body which is capable of generating a space charge region in said body. |
申请公布号 |
JPS57141971(A) |
申请公布日期 |
1982.09.02 |
申请号 |
JP19810166284 |
申请日期 |
1981.10.16 |
申请人 |
RCA CORP |
发明人 |
DEIBITSUDO EMIRU KAARUSON |
分类号 |
H01L31/04;H01L21/205;H01L29/861;H01L31/10 |
主分类号 |
H01L31/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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