MANUFACTURE OF SEMICONDUCTOR DEVICE

摘要

PURPOSE:To facilitate the integration, by using ion implantation method for the formation of an insular impurity region serving as a source or drain. CONSTITUTION:N type impurity with high density is implanted into the position of the attachment of a source and drain electrodes by ion beam 13, after the formation of semi-insulating GaAs layer 2, GaAs layer 3, Ga0.7Al0.3 As layer 4, GaAs layer 5 and mask 12 on a substrate 1. After the mask 12 is removed, the mask 12 is formed again with the implantation of Se ion 14 to form an n type channel 7. Next, a source drain electrodes and gate electrode, etc. are formed by a usual method.