发明名称 SEMICONDUCTOR DIAPHRAM TYPE SENSOR
摘要 PURPOSE:To contrive reduction of effect of temperature, induced noise, static pressure and overload respectively by a method wherein a diaphragm type pressure-sensitive element, a highly insulative member with the thermal expansion coefficient approximate to that of the pressure-sensitive element, and a metal supporting member with the thermal expansion coefficient close to that of the above element are provided. CONSTITUTION:A diaphragm 1 consists of Si, and a rigid body is provided in the center. A boron-silicate glass 2 has the thermal expansion coefficient which is approximate to that of the diaphragm 1, and also it has high insulating property. An Fe-Ni alloy 3 has the thermal expansion coefficient approximate to that of the diaphragm 1 or the glas 2. These materials are adhered securely and uniformly using the same low distortion adhering method. As this point, when x is given to the ratio of the diameter Af of the surface to be adhered to the glass 2 of the alloy 3 and the diameter Ag of the glass 2 and y is given to the ratio of the thickness tg of the glass 2 and the thickness t2 of the thickly-formed part on the circumference of the diaphragm, the design is drawn up in such a manner that these variable x and y will satisfy a (1-x)<=y<=b(1-x)[a and b are considered to br as 1 and 12 or thereabouts]respectively.
申请公布号 JPS57167684(A) 申请公布日期 1982.10.15
申请号 JP19810051825 申请日期 1981.04.08
申请人 HITACHI SEISAKUSHO KK 发明人 TANABE MASANORI;SHIMADA SATOSHI;NISHIHARA MOTOHISA;YAMADA KAZUJI;MATSUOKA YOSHITAKA;SHIMAZOE MICHITAKA
分类号 G01L9/04;G01L9/00;H01L29/84 主分类号 G01L9/04
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