| 发明名称 |
METHOD OF GROWING PLASMA OXIDE ON SEMICONDUCTOR SUBSTRATES AND DEVICE FOR CARRYING OUT THIS METHOD |
| 摘要 |
Uniform growth of oxide at low temperature can be performed in a plasma environment by positioning the substrates on which the oxide is to grow outside of the plasma area and independently supplying heat to the substrates in the presence of controlled oxygen pressure. |
| 申请公布号 |
DE3060785(D1) |
申请公布日期 |
1982.10.28 |
| 申请号 |
DE19803060785 |
申请日期 |
1980.01.23 |
| 申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
RAY, ASIT KUMAR;REISMAN, ARNOLD |
| 分类号 |
H01L21/31;C23C8/36;H01L21/316;(IPC1-7):H01L21/31;H01J37/32 |
主分类号 |
H01L21/31 |
| 代理机构 |
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代理人 |
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| 主权项 |
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