发明名称 FIELD CONTROL TYPE OPTICAL SEMICONDUCTOR DEVICE
摘要 PURPOSE:To obtain photoconductivity corresponding to the intensity of light by letting an optical filter into a region between two electrodes on an intrinsic semiconductor substrate through a transparent electrode and insulation film. CONSTITUTION:An intrinsic semiconductor substrate 1 is provided and electrodes 3 and 4 are formed by ohmic formation on its main surface 2. A transparent electrode 12 is formed on a region 5 between the electrodes 3 and 4 on the substrate 1 via a transparent insulation layer 11 which is formed on the side of the main surface 2. The light 6 is let incident into the side of the main surface 2 of the region 5 on the substrate 1 through the insulation layer 11 and the electrode 12. With this constitution, the photoconductivity corresponding to the intensity of the light can be obtained and the corresponding photoelectric current can be supplied to a load.
申请公布号 JPS57183076(A) 申请公布日期 1982.11.11
申请号 JP19810068804 申请日期 1981.05.07
申请人 NIPPON DENSHIN DENWA KOSHA 发明人 YAMAGUCHI EIICHI;KOBAYASHI TAKESHI
分类号 H01L31/10;H01L31/113 主分类号 H01L31/10
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