SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE

摘要

PURPOSE:To manufacture the master slice LSI with the high functional integration by a method wherein the specified circuit elements may be formed as necessary between each of the rows of the arbitrary reference cells. CONSTITUTION:The multiple reference cells 2 comprising two pairs of P type and N type MOS transistors are jointly provided on one of the main surface sides of the semiconductor substrate in the X axial direction forming the rows of reference cells, while the plural rows of reference cells are also jointly provided at the specified interval in the y axial direction. Then two each of the N channel type MOS transistor 120 per row of reference cell are formed. The resistors may be constituted efficiently by means of changing the first and the second wirings as well as the master for contact hole connecting the wirings in accordance with the user's demand in the formation so far mentioned.