| 摘要 |
PURPOSE:To precipitate and deposit a surface protecting film of uniform thickness at the non-plane-formed section by a method wherein the non-plane-formed section of a semiconductor substrate is heated up, and the gas containing the ingredients of the surface protecting film is blasted on the heated non-plane section. CONSTITUTION:The substrate 1, having the processed exposed end face at its main junction, is placed on a heating plate 2, a bell jar 21 is closed, the interior of the bell jar 21 is replaced with N2 gas, the heating plate 24 is heated up and rotated. Then, the point of a nozzle 27 is turned to the substrate 1, and when the temperature of the substrate 1 reaches the prescribed temperature, valves 326 and 327 are opened, and SiH4 and N2O are led into a reaction chamber from the nozzle 27. Accordingly, a polycrystalline Si film can be formed at the concaved part on the side face of the substrate 1 in an almost uniformed state. |
