发明名称 FORMATION OF MASK PATTERN
摘要 PURPOSE:To form a highly accurate super microscopic pattern on a substrate having a roughened surface by a method wherein an organic layer, with which a mask pattern will be formed, is formed on a substrate, and a mask pattern consisting of organic material is formed on the above of the organic layer. CONSTITUTION:On the roughened substrate 1, an organic layer 2, whereon the mask pattern is expected to be formed, is coated, a layer 3 of organic material sensitive to a particle beam or radioactive rays is covered on the organic layer 2, and a pattern is formed on the layer 3. Thus, when different kinds of organic materials are applied on two layers, the film of the upper layer 3 is formed almost uniformly irrespective of stepped sections, and the pattern which displays the resolution originally possessed by the material can be formed. Then, the pattern of organic material 2 can be obtained by irradiating an oxygen-ion beam on the whole surface of the sample.
申请公布号 JPS57183036(A) 申请公布日期 1982.11.11
申请号 JP19810067971 申请日期 1981.05.06
申请人 NIPPON DENKI KK 发明人 GOKAN HIROSHI
分类号 H01L21/302;H01L21/3065;(IPC1-7):01L21/302 主分类号 H01L21/302
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