| 摘要 |
PURPOSE:To enhance the reliability of a semiconductor device by providing an inversion preventive electrode, and controlling a voltage itself applied to an MOS structure, thereby preventing the production of a parasitic MOS transistor. CONSTITUTION:The highest voltage of semiconductor devices is applied to an n type silicon substrate 11. Two p type diffused resistors 121, 122 are formed vertically to the sectional surface and in parallel with the surface on the surface of the substrate 11. Operating resistors 121, 122 and the substrate 11 are reversely biased, and the resistors 121, 122 are operated in the state to be electrically isolated. The surface of the substrate 11 is covered with an interlayer insulating film 13, and an inversion preventing electrode 14, interlayer insulating film 14 and wire 16 are formed on the surface. The voltage applied to the MOS structure having the substrate 11, the film 13 and the electrode 14 is controlled by the wire 16 and the electrode 14. |
