| 摘要 |
PURPOSE:To perform a stable wiring work on a thick semiconductor element by a method wherein the thickness of ceramic, which will be used as the side wall located on the circumference of a semiconductor element, is formed thicker than that of the other part. CONSTITUTION:The layer 11a with an element adhering part 12 in the center, the frame 11b with an internal lead metalized film 13, and the ceramic laminated material 11 consisting of a wring protection frame 11d are formed, and a semiconductor element 14 is soldered. A metal cover 17, a frame 18 and an external lead 19 are soldered. The contact of the edge of the element or the metal cover and the wiring when the wiring is performed is to be prevented. The reliability of the device can be improved with this constitution. |
