| 摘要 |
PURPOSE:To provide considerable ease of reactive material removal when removing reactive material adhered to the inner wall of a reaction tube through the plasma etching cleaning by using an indirect-heating heater coil both as a heater for the reaction furnace and as a high frequency electrode for plasma generation. CONSTITUTION:A wafer supporter 21 with a multitube of semiconductor wafers 20 positioned thereupon is enclosed in a reaction tube 1 having a reaction gas introduction pipe 17 at the one end of the tube, its other end being closed through a O-ring 3 with a lid 2. The lid 2 has a pipe 4 perforated through it and a vacuum pump 7, a trap 6, and a vacuum gauge 19, etc. are externally connected to the pipe. An indirect-heating heater coil 8 is placed around the reaction tube 1, and both ends of the coil 8 are connected through a movable contact (c) and a fixed contact (b) to a 50-HZ heating power supply 23. In this constitution a growth layer is formed at the surface of each wafer 20. Also, a 13.56MHZ high frequency plasma-generating power supply 24 is employed and switched at contact (a) to generate plasma discharge 18a in the reaction tube 1 by means of the coil 8 to remove reactive materials adhered to the tube inner wall. |
