| 摘要 |
PURPOSE:To improve the withstand voltage of a semiconductor device, to prevent the stepwise disconnection of electrodes and to facilitate an ultrafine control of the device by forming aluminum multilayer wiring on a semiconductor substrate, forming aluminum wire electrodes of lower layer, then coating a silicon nitride film, and partly removing the film to smoothen the surface, heat treating the substrate in an oxidative atmosphere to form an Al2O3 film on the surface, thereby suppressing the generation of a leakage current. CONSTITUTION:An aluminum wire electrode 4 of first layer is selectively formed by a photoetching method, and the surface of a silicon nitride film 8 is etched by a reactive ion etching for forming the film 8 by a plasma CVD method on the overall surface of a main surface 7, thereby smoothening the surface shape. The heat treatment is performed in an oxidative atmosphere containing O2 at 400- 530 deg.C, thereby immersing the oxidative gas through pinholes 10 and forming an Al2O3 film 11 in reaction with the surface of the electrode 4 of the first layer. An aluminum wire electrode of second layer is formed on the surface, and the above steps are then repeated, thereby forming aluminum multilayer wiring. |
