| 摘要 |
PURPOSE:To attain high performance and high integration density of hybrid integrated circuits by forming an insulator thin film and semiconductor single crystal thin film on the surface of a first integrated circuit and then also forming an MOS type second integrated circuit on such semiconductor single crystal thin film. CONSTITUTION:An N type epitaxial layer 204 having an N<+> type buried diffusion layer 202 is formed on a P type substrate 201 and then a base 206 and emitter 207 are formed by depositing a P<+> type diffusion layer 203 for element separation. Thereafter an inter-element wiring metal 208 is formed so as to form a bipolar integrated circuit. Continuously, an SiO2 film 209 and polycrystalline silicon film 210 are formed on the bipolar integrated circuit. The polycrystalline silicon film 210 is single-crystallized through irradiation of a high energy beam. After the single crystal layer 210 is isolated through insulation, the gate 211, source, drain diffusion layer 212 of the MOS transistor are formed and the MOS transistor is finished with formation of the inter-element metal wiring 213. |
