发明名称 SEMICONDUCTOR LASER DEVICE
摘要 PURPOSE:To reduce the astigmatism of a laser device by integrally forming a refractive index guide having variation in the impurity density parallel to a laser active layer. CONSTITUTION:When a voltage is applied between a P-side electrode 10 and an N-side electrode 9 so that the former becomes positive in polarity, a current is concentrated only directly under the striped groove 6 and the vicinity to the groove, and electrons are injected only to the vicinity directly under the striped groove 6 of a P type AlyGay-1As active layer 3 from an N type AlxGax-1As layer 2, and recombination light emission occurs in this part. When the groove 6 is designed suitably in width and the current is sufficiently amplified, a gain guide type laser oscillation occurs in a direction parallel to the layer 3. When the width of the stripe is sufficiently reduced, lateral mode becomes single mode, but longitudinal mode becomes a multiple mode oscillation. Since the oscillation is performed in the gain guide type striped laser region for oscillating in longitudinal multiple mode and in the striped laser region A, the bent wave surface of the light emitted from the regions is corrected and is integrated with the refractive index guide region B for straightening the light, transition noise at the time of varying the temperature is less, and the astigmatism can be reduced.
申请公布号 JPS5839086(A) 申请公布日期 1983.03.07
申请号 JP19810137330 申请日期 1981.08.31
申请人 MITSUBISHI DENKI KK 发明人 MIHASHI YUTAKA;KAKIMOTO SHIYOUICHI;SOGOU TOSHIO;TAKAMIYA SABUROU
分类号 H01S5/00;H01S5/20;H01S5/22 主分类号 H01S5/00
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