| 摘要 |
PURPOSE:To improve the sensitivity and withstand voltage of the semiconductor device the main current of which is controlled by electricity or optical signals by a method wherein the successive layers exceeding three layers are provided and the semiconductor elements of the layers are formed into conductors with alternately different shapes. CONSTITUTION:When the voltage is impressed between the emitter terminal 13 and the collector terminal 14 of a transistor assuming the collector side to be positive, the p-n junction between p type embedded layer 11 in the collector layer 3 and n type collector layer 3 is in the inversed bias status and as far as the impressed voltage is lower, the collector layer 3 is not completely disconnected by the depletion layer around said embedded layer 11 to be conducted by the incident light over the base layer 2 just like the conventional phototransistor. When the voltage impressed between the emitter terminal 13 and the collector terminal 14 is further boosted, the depletion layer around said embedded layer 11 is expanded in the collector layer 3 making the embedded layer 11 work just like the gate layer of the joint type field effect transistor to disconnect the the collector layer 3 making the carrier unalbe to pass thereby improving the withstand voltage between emitter and collector. |
