| 摘要 |
PURPOSE:To solve a thermal problem which limits the performation of a chip by effectively dissipating the heat generated in a semiconductor element, thereby improving a thermal resistance. CONSTITUTION:One surface of an insulator 3 made of ceramics such as alumina or steatite and one surface of a metal plate 7 such as molybdenum or tungsten having generally equal thermal expansion coefficient to silicon are soldered to one surface of a metal member 1 which operates also as the mounting to an external circuit and the dissipation of the heat, metallized layers 4a, 4b, 4c are formed on the other surface of the insulator 3, the plate of semiconductor having an insulating film 8 such as an oxidized film and a metallized layer 4d to be placed on a chip such as the lower surface of a silicon substrate 9 is bonded by a solder onto the upper surface of the plate 7, a chip 5 is bonded by a solder such as An-Si, and the layers 4a, 4d and the layers 4b, 4c as well as chip electrodes are connected via fine metal wirings 6. |
