| 摘要 |
PURPOSE:To obtain a solid-state image pickup element with high yield, by considerably simplifying the contruction of picture elements of a photodetection part occupying most part of the area. CONSTITUTION:A background scanning substrate (a) is provided with a substrate 42, a scanning circuit 41, a bonding pad 40 and a row wiring 22. In a unit picture element 43, either one of the unit picture element out of three kinds is formed on the row wiring as shown in Fig A. As diodes and photo diodes, pin or p-n diodes of amorphous silicon hydride and p-n diodes of polycrystal Si are used and they are split with photo etching for each picture element 43. Further, an insulating film 44 is laminated and etched off on the picture element only with photo etching. A transparent electrode 26 corresponding to the row wiring is formed and photo etching is done orthogonally to the colume wiring in stripe shape. |
