| 摘要 |
PURPOSE:To shorten the steps of manufacturing a semiconductor device by forming a laminated structure in the second gate electrode, thereby reducing the stepwise difference to facilitate the application of an anisotropic etching, thereby performing a high integration, reducing the layer resistance of the second gate electrode, thereby accelerating the operation and simultaneously forming the first and second gate oxidized films. CONSTITUTION:After a polycrystalline silicon 6 to become the second gate electrode upper layer is accumulated in a thickness of 3,000Angstrom , it is patterned, the second gate electrode to become a transfer gate is formed in a laminated structure of a polycrystalline silicon 4B and a polycrystalline silicon 6, thereby forming a transfer gate of approx. 6,000Angstrom thick. Thereafter, a source and drain region 7, a contacting hole 15, an interlayer CVD film 8 and an Al wiring layer 9 are sequentially formed by an ordinary method, thereby manufacturing a semiconductor memory device of two-layer electrode structure. |
