发明名称 SEMICONDUCTOR DEVICE
摘要 PURPOSE:To take the relative ratio of ion injection resistors with high accuracy regardless of shape by setting the number of the ion injection resistors while being conformed to a resistance ratio without resembling the shape in the relative ratio of the ion injection resistors. CONSTITUTION:A high-concentration region 49 is formed at one position of the ion injection resistor region 23' of the resistor R1 while being crossed on the resistor region 23', and the full length (L1'+L2'+L3') of the resistor sections of the resistor R2 and the full length (L4'+L5'+L6') of those of the resistor R1 are equally designed. The number of the substantial ion injection resistor sections between the resistors R1 and R2 is uniform because the high-concentration region 49 is overlapped on the resistor region 23'.
申请公布号 JPS5867058(A) 申请公布日期 1983.04.21
申请号 JP19810165338 申请日期 1981.10.16
申请人 NIPPON DENKI KK 发明人 KISHI ATSUSHI
分类号 H01L27/04;H01L21/822;H01L27/08 主分类号 H01L27/04
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