| 摘要 |
PURPOSE:To improve the lowering, etc. of reliability due to the increase of wiring delay and a voltage drop with the increase of wiring length and wiring resisttance and the increase of electromigration by changing the electrode wiring of a semiconductor integrated circuit into superconductive wiring. CONSTITUTION:A molybdenum thin-film 3 is formed through an electron-beam heating evaporation method, and the resist pattern 4 of a gate electrode is shaped through lithography technique while the molybdenum thin-film is processed without side etching as using the pattern 4 as a mask and the gate electrode 5 is formed. A resist is removed, the whole is thermally treated for thirty min at the ratio of flow rate of hydrogen to nitrogen of H2/N2=0.1 and in the atmosphere of the temperature of 650 deg.C, molybdenum is nitrified and the superconducting gate electrode wiring 5' consisting of Mo2N is obtained. A phosphorus added oxide film 7 is processed without side-etching a through-hole pattern, to which the phosphorus added oxide film is deposited, and a through-hole is formed. The molybdenum thin-film 10 is etched without side etching through reactive sputtering etching while using an electrode wiring resist pattern 9 as a mask. Lastly, the resist is removed, molybdenum is nitrified, and the superconductive wiring 10' is shaped. |
