| 摘要 |
PURPOSE:To prevent a constriction and breaking at a stage due to the stage difference of a through-hole by removing aluminum evaporated to sections except the through-hole through the lift-off of gold and forming the second layer wiring. CONSTITUTION:The first layer wiring 1 is shaped to the upper surface of a silicon substrate 7 through an oxide film 3, and a layer insulating film 2 is formed onto the wiring 1. A metal having inferior adhesive property such as gold 4 is evaporated onto the surface of the layer insulating film 2, and the one part is removed selectively by using a photo-resist method. An opening section (through-hole) 2a through which the first layer wiring 1 is exposed is shaped by etching the layer insulating film 2 while using remaining gold 4 as a mask, and a metal for connection having approximately the same film thickness as the depth of the opening section such as aluminum 5 is evaporated. Aluminum 5 of sections except the opening section 2a is removed through the lift-off of gold 4, aluminum as the metal for connection is left in the opening section 2a, and the second layer wiring 6 connected to the first layer wiring 1 through the aluminum 5 of the opening section is formed. |
