| 摘要 |
PURPOSE:To form source.drain with good control and attain the high density by forming the contact area zero, by connecting them electrically with a gate electrode surrounded by an insulating film on the side surface of the source drain. CONSTITUTION:An Si oxide film 9 serving as the insulating film is formed on the side surface of a polycrystalline Si 6 serving as the gate electrode by a thermal oxidation, and next an Si oxide film 9' simultaneously formed on the surface of an Si substrate 1 is etching-removed. Subsequently, after forming an Si oxide film 10 over the entire surface by a sputter method, e.g. a polycrystalline Si 11 containing As serving as the source drain is adhered over the entire surface. Succeedingly, when an Al wiring 12 is adhered over the entire surface and patterned, the electric connection between the Al wiring 12 is performed on the side surface of the polycrystalline Si 11, 11 serving as the source.drain. |
