| 摘要 |
PURPOSE:To improve the threshold current characteristics of a semiconductor laser by providing an acceptor having the prescribed density, and an active layer doped with a doner of the prescribed density for compensating for the acceptor. CONSTITUTION:A semiconductor laser has an acceptor doped with 1X10<16>- 1X10<18>cm<-3> of density and a doner of 1X10<16>-1X10<18>cm<-3> of density for compensating the acceptor. The free carrier absorption and Auger recombination can be suppressed to small value by forming in this manner. As a result, the threshold current characteristics of the laser can be improved. |
