| 摘要 |
PURPOSE:To obtain preferable Schottky junction between one conductive type semiconductor and a W-Ti alloy by implanting ions capable of forming one conductive semiconductor in a semiconductor, covering the implanted layer with W-Ti alloy, nitrided W-Ti alloy and further Au, heat treating it at a high temperature, thereby activating the ion implanted layer. CONSTITUTION:Impurity ions of Si, Se, S, or Sn which become one conductive type impurity are implanted on a high resistance GaAs substrate 1, thereby forming an ion implanted layer 2. Then, a W-Ti alloy 3, a nitrided W-Ti alloy 4 and an Au 5 are sequentially coated on the layer 2, it is then heat treated in H2 atmosphere or inert gas of 850 deg.C for approx. 10min, thereby converting the layer 2 into an active layer. Thereafter, the gate electrode or a wiring corresponding part is covered with a protecting film 6 such as resist, a gate electrode 8 which is formed of alloy or the like is allowed to remain only under the film 6 by ion milling and etching, thereby forming a preferable Schottky junction between the alloy 3 and the active layer. Then, source and drain electrodes 9, 10 are formed on the active layer at both sides of the electrode 8. |
