| 摘要 |
PURPOSE:To enable the formation of a single crystal film on the flat surface of a substrate by a method wherein amorphous insulators having different chemical compositions are arranged periodically on the substrate, and a polycrystalline semiconductor is deposited thereon and heated to be single crystal. CONSTITUTION:Amorphous Si3N42 and amorphous SiO23 are formed on an Si single crystal substrate 1 so that they are arranged periodically. Next, an amorphous or polycrystalline Si film is deposited on the substrate 1 having the structure thus formed. Then, this Si film is heated by using laser beams. By this heating, an Si single crystal film 4 having excellent orientation is formed on the substrate 1. In this case, the method of heating is not limited to that by laser beams, and heating by infrared rays or by resistance may be applied as well. Since it enables the formation of a single crystal film on the flat surface of a substrate in this way, this method is effective as a method for preparation of a substrate for high-density IC and a substrate for a three-dimentional device. |
