Semiconductor device made of amorphous silicon

摘要

A description is given of a semiconductor device made of amorphous silicon which comprises a base element (1) and a semiconductor layer (5) formed on the latter and made of amorphous silicon, the base element (1) and the layer (5) each having the same or approximately the same linear coefficient of expansion. The device also comprises a silicon dioxide barrier layer (2) for preventing the diffusion of impurity atoms which is situated between the semiconductor layer (5) and the base element (1). This device has excellent (semiconductor) properties without (mechanical) stresses being present in the amorphous silicon semiconductor layer.