| 摘要 |
PURPOSE:To improve the effect of energy storage, by using a material wherein a semiamorphous material having crystal property of the size of an amorphous material is a main component, and a halogen element such as hydrogen, flourine, and chlorine is added to a non-single crystal semiconductor for neutralizing a recombination center. CONSTITUTION:The non-single crystal semiconductor 12 having a P-I-N junction is provided. A redox 1 is arranged so as to contact with an N or P layer 16 of the semiconductor 12. An opposing electrode 28 is provided. Incident light 10 is inputted into the side of a light transmitting substrate 30. Electrons or holes generated by said semiconductor 12 are imparted to an interface 9 with the redox 1, and the redox reaction is yielded. Non-single crystal silicon, which is formed as an intrinsicsemiconductor by a plasma CVD method, is used in a semiconductor 15. Carbon or silicon carbide as SixC1-x (0<=x<1) are used in a P or N layer 14 or the N or P layer 16. |
