发明名称 SELF SHIFT TYPE GAS DISCHARGE PANEL
摘要 Disclosed is an AC memory drive type self-shift type gas discharge panel which can prevent an accidental discharge caused by distributed abnormal charges which are stored at both ends of the shift channel. A path for leaking the abnormal charges is provided in the overlying dielectric layer at positions covering the outermost electrodes defining the end discharge cells. The leakage path can be provided by means of a crevice extending from an edge of the relevant electrode to the surface of the dielectric layer.
申请公布号 CA1151716(A) 申请公布日期 1983.08.09
申请号 CA19800366833 申请日期 1980.12.15
申请人 FUJITSU LIMITED 发明人 SHINODA, TSUTAE;YOSHIKAWA, KAZUO;MIYASHITA, YOSHINORI
分类号 H01J11/10;H01J11/12;H01J11/28;H01J11/38 主分类号 H01J11/10
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