| 摘要 |
PURPOSE:To lower the crosstalk level of a high-speed switch, and to remove insertion loss by branching one guide into a plurality of optical guides and providing a means partially exciting the guides. CONSTITUTION:An n type GaAlAs layer 2, a p type GaAlAs layer 3, a p type GaAlAs layer 4 and an n type GaAs layer are grown onto an n type GaAs substrate 1 in an epitaxial manner, and a Si3N4 layer 6 is deposited. The Si3N4 layer 6 is removed in a guide shape with branch paths 42, 43 to expose the n type GaAs layer 5, and insulating grooves 21, 22 are formed. Several sections of each of guides 41, 42, 43 is excited independently by currents flowed among an electrode 10 formed to the back and each of electrode 31, 32, 33 sections. |
